天津市科委 2000 Vol. Issue 1

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半导体杂志
天津市科委

Year 2000

Issue 1

The Growth Methods for Epitaxial Si_(1-x-y) Ge_xC_y Alloys (Si_(1-x-y)Ge_xC_y材料的外延生长方法)

YU Zhuo, CHENG Buwen, LI Daizong, YU Jinzhong, WANG Qiming, LIANG Junwu(instituteofsemiconductors, CHINESE Academyofsciences, beijing, 100083)

.................. page:1-5,22

Electrical Properties of SIMOX films (SIMOX薄膜材料的电学性能)

LU Diantong1, P.L.F.HEMMENT 2(1.instituteoflowenergynuclearphysics, BEIJING Normaluniversity, BEIJING Radiationcenter, 10875, 2.DEPARTMENT Ofelectronicandelectricalengineering, UNIVERSITY Ofsurrey, GUILFORD Surreygu25xh, uk.)

.................. page:6-9

Application Study of Spreading Resistance Technique on Silicon and Silica base Material (扩展电阻技术在硅、硅基材料测试中的应用)

WU Xiaohong, \ \\minjing(shanghaiinstituteofmeasurementandtestingtechnology, SHANGHAI 200233)

.................. page:10-13

Electronic structure of 60°edge dislocation in semiconductor material Ge (半导体锗中60°棱位错的电子结构)

ZHANG Guoying1, 2 , LIU Guili1(1.shenyangpolytechnicuniversity, 110023, 2.NORTHEASTERN University, 110006)

.................. page:14-17,22

On-time Rectificative High Efficiency Power Factor Correction Circuit (同期整流的高效率双向PFC电路)

LI Zhong, \ Xuyatao, \ Biantao, \ Qinshicai(thedepartmentofmicroelectronicsscience, NANKAI University, tianjin, 300071)

.................. page:18-22

The relation between GaAs substrate's deep level EL2 and two phenomena (light sensibility and hysteresis) of sidegating effect (GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象)

NING Jun1, DING Yong1, XIA Guanqun2, ZHAO Fuchuan2, MAO Youde1, ZHAO Jianlong2(1seniconductorandmicroelectronicsstaffroom, HE Feiuniversityoftechnology\2300092shanghaiinstituteofmetalling, CHINESE Academyofsciences\

.................. page:23-26

ri ben zheng qi lian he kai fa 0.1 m yi xia ban dao ti sheng chan ji shu (日本政企联合开发0.1μm以下半导体生产技术)

REN Xuemin

.................. page:26

Electronic States in the Graded Quantum Well Al_xGa_(1-x) As (线性斜量子阱Al_xGa_(1-x)As中的电子态)

SONG Rongli(departmentofphysics, TAIYUAN Univercityoftechnology, 030024)

.................. page:27-30

pledm cun chu qi (PLEDM存储器)

.................. page:30

Current-voltage characteristics of InGaAs/InAlAs RTD via quantum mechanical tunneling (InGaAs/InAlAs RTD I-V特性的量子力学隧穿模拟)

HE Hongbo, \ Zhoujicheng, \ Huhuifang, \ Liyibing(materialsresearchinstitute, COLLEGE Ofinformation, CHANGSHA Railwayuniversity, hunan, 410075)

.................. page:31-34

de guo kai fa chu d8discover bao mo fen xi yi (德国开发出D8DISCOVER薄膜分析仪)

CHENG Xianzhang

.................. page:34

Physics 、structure and technology of the deep submicron MOS devices (深亚微米MOS器件的物理、结构与工艺)

LIU Yanhong, \ Zhaoyu, \ Wangmeitian, \ Hulizhong, \ Weixiwen(dept.ofphys., DALIAN Univ.oftechnol., china)

.................. page:35-39

Conductive Mechanism of New type NTC (Metal PTC Ceramic) Composite (新型NTC(金属PTC陶瓷)复合材料的导电机制)

YANG Hai, LI Chaoyou, YU Hongfei, CAI Wude, KING Zhengkun(departmentofphysics, YUNNAN Normaluniversity, KUNMING\ 650092)

.................. page:40-42

The Relationship Between Semiconductor Superlattice Study and Related Subject Development (半导体超晶格研究与相关学科领域发展的关系)

PENG Yingcai1, FU Guangsheng21collegeofelectronicinformationalengineering, HEBEI University, baoding, 071002, chn, 2 Departmentofphysics, HEBEI University, baoding, 071002, chn

.................. page:43-46

Past, Today and Future of Pressure Sensor (压力传感器的发展、现状与未来)

ZHANG Xiaoqun, \ \lhuimin(1.xianuniversityofarchitecture&technology, 710055, 2.DEPT. Ofappliedphysics, XI Anuniversityoftechnology, XI An, 710048)

.................. page:47-50

A Tail-difference Algorithm for Two Random Pulses and Design of Correlative Integrated Circuit (二路随机脉冲尾数求差法及相关的集成电路设计)

WANG Jianping, HU Xiaopeng(schoolofengineeringandtechnologyshenzhenuniversity, guangdong, 518060)

.................. page:51-55

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