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zhong zi fu zhao shen hua zuo de kuai su tui huo xing wei de zheng dian zi shou ming yan jiu
Pages: 15-19
Year: Issue:  3
Journal: 天津市科委

Keyword:  GaAs中子辐照正电子湮没技术快速退火空位缺陷;
Abstract: 用正电子湮没技术研究了中子辐照半绝缘GaAs的快速退火行为。结果表明:辐照引入的空位缺陷浓度与辐照剂量有关。退火过程中的空位团的分解和聚合与退火温度和辐照剂量关。
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