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fei jing gui zhe dan jie dian chi de yan jiu
Author(s): 
Pages: 1-3+8
Year: Issue:  3
Journal: 天津市科委

Keyword:  非晶硅锗单结电池p/i界面i/n界面;
Abstract: p/i和i/n界面对aSiGe单结电池的性能影响较大,提高电池性能的关键是减小界面复合。选择适当的工艺条件,获得了效率为201%的aSiGe单结电池。
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