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tong guo wen du ya li kong zhi lec-gaas dan jing hua xue pei bi de shi yan yan jiu
Author(s): 
Pages: 4-8
Year: Issue:  3
Journal: 天津市科委

Keyword:  液封直拉法化学配比As挥发结构缺陷;
Abstract: 通过温度压力改变,使整个LECGaAs单晶生长过程As损失最小。获得了化学配比较好的SIGaAs单晶。单晶表面离解少,特别是单晶尾部结构缺陷也少。分析了LECSIGaAs单晶生长过程中As的挥发和生长环境压力对生长的单晶位错密度的影响。
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