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HCI Reliability in MOSFET's under On State
Author(s): 
Pages: 51-59
Year: Issue:  4
Journal: 天津市科委

Keyword:  可靠性 热载流子效应 金属氧化物半导体场效应晶体管 寿命预测模型;
Abstract: 综述了近年来MOSFET的热载流子效应和可靠性问题 ,总结了几种热载流子 ,并在此基础上详细讨论了热载流子注入 (HCI)引起的退化机制。对器件寿命预测模型进行了总结和讨论。为MOSFET热载流子效应可靠性研究奠定了基础
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